[1]J. Phys.: Condens. Matter 21 (2009) 075702;
[2]NATURE| Vol 466| 15 July 2010.
[3]DOI: 10.1038/NPHYS1717
[2]Our studies reveal intra-unit-cell, C2 symmetric excitations at the pseudogap energy and that these effects are associated primarily with electronic inequivalence at the two O sites within the CuO2 unit cell. Given the many common characteristics observed by these diverse techniques, it is reasonable to consider whether ARPES, neutron diffraction and spectroscopic-imaging STM are detecting the same excitations with the samebroken symmetries. If so, the pseudogap excitations of underdoped copper oxides would represent weakly magnetic states at the O sites within each CuO2 unit cell, the electronic structure of which breaks C4 symmetry. Then, the electronic symmetry breaking that occurs on entering the pseudogap phase would be due to the electronic nematic state visualized here, for the first time to our knowledge. Finally, the nematicity found in electronic transport27, thermal
transport28 and the spin excitation spectrum29 of YBa2Cu3O61 x could then occur because the Ising domains of OQ n (r, e) become aligned by the strong orthorhombicity of its crystal structure30.
[3]A Mott insulator is a material that is insulating because
of strong Coulomb repulsions between electrons. Doping
charge carriers, electrons or holes into a Mott insulator can
induce high-temperature superconductivity. Thus, what exactly
happens when a charge carrier is doped into a Mott insulator
is a key question in many-body physics1–4. To address this
issue, ideally one should start from a zero-doping state5–7
and be able to introduce both holes and electrons in the
dilute limit. However, such an idealized experiment has been
impossible because of the lack of suitable materials. Here
we show that a new ‘ambipolar’ cuprate makes it possible
for the first time to cross the zero-doping state in the same
material, which in turn allows us to address the physics of
the extremely low-doping region. Surprisingly, we found that
the antiferromagnetic ground state sharply changes between
electron- and hole-doped sides, and this change is dictated by
the existence of only 0.1 ppm of charge carriers. Moreover, we
observed that the NĂ©el temperature TN shows an unexpected
reduction in a narrow range centred at the zero-doping state,
across which the system exhibits asymmetric behaviours in
transport measurements. Our findings reveal the inherently
different nature of electron and hole doping in the dilute limit
of a Mott-insulating cuprate.